New high-resolution central schemes for nonlinear conservation laws and convection-diffusion equations. Microstructure of Cu-C interface in Cu-based metal matrix composite. Hybridization vs decoupling: influence of an h-BN interlayer on the physical properties of a lander-type molecule on Ni(111). To tilt or not to tilt: correction of the distortion caused by inclined sample surfaces in low-energy electron diffraction. Determination and correction of distortions and systematic errors in low-energy electron diffraction. Sojka, F., Meissner, M., Zwick, C., Forker, R. Raman spectrum of graphene and graphene layers. Plasma shielding effects on ionic recombination. Carbon in copper and silver: diffusion and mechanical properties. Study on the diffusion mechanism of graphene grown on copper pockets. Fast growth of inch-sized single-crystalline graphene from a controlled single nucleus on Cu–Ni alloys. The cause of the colours shown during the oxidation of metallic copper. Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu(111). Orientation-dependent strain relaxation and chemical functionalization of graphene on a Cu(111) foil. Wafer‐scale synthesis of graphene on sapphire: toward fab‐compatible graphene. Copper-vapor-assisted chemical vapor deposition for high-quality and metal-free single-layer graphene on amorphous SiO2 substrate. Direct formation of wafer scale graphene thin layers on insulating substrates by chemical vapor deposition. Transfer-free growth of graphene on SiO 2 insulator substrate from sputtered carbon and nickel films. Fast growth and broad applications of 25-inch uniform graphene glass. Oxygen-aided synthesis of polycrystalline graphene on silicon dioxide substrates. Single-crystal, large-area, fold-free monolayer graphene. Colossal grain growth yields single-crystal metal foils by contact-free annealing. Evolutionary selection growth of two-dimensional materials on polycrystalline substrates. Adlayer-free large-area single crystal graphene grown on a Cu(111) foil. Fast growth of inch-sized single-crystalline graphene from a controlled single nucleus on Cu-Ni alloys. Highly oriented monolayer graphene grown on a Cu/Ni (111) alloy foil. Fractal‐theory‐based control of the shape and quality of CVD‐grown 2D materials. Synthesis of high quality graphene on capped (111) Cu thin films obtained by high temperature secondary grain growth on c-plane sapphire substrates. Large-area synthesis of high-quality and uniform graphene films on copper foils. Unconventional superconductivity in magic-angle graphene superlattices. Correlated insulator behaviour at half-filling in magic-angle graphene superlattices. Graphene and two-dimensional materials for silicon technology. This work breaks a bottleneck of synthesizing wafer-scale single-crystal monolayer graphene on insulating substrates and could contribute to next-generation graphene-based nanodevices. Field-effect transistors fabricated on as-grown graphene exhibited good electronic transport properties with high carrier mobilities. Immersion in liquid nitrogen followed by rapid heating causes the Cu(111) film to bulge and peel off easily, while the graphene film remains on the sapphire substrate without degradation. We converted polycrystalline Cu foil placed on Al 2O 3(0001) into single-crystal Cu(111) film via annealing, and then achieved epitaxial growth of graphene at the interface between Cu(111) and Al 2O 3(0001) by multi-cycle plasma etching-assisted–chemical vapour deposition. Here we demonstrate the wafer-scale synthesis of adlayer-free ultra-flat single-crystal monolayer graphene on sapphire substrates. The growth of inch-scale high-quality graphene on insulating substrates is desirable for electronic and optoelectronic applications, but remains challenging due to the lack of metal catalysis.
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